Structural, Optical and Electrical Characterization of Polycrystalline Ga15Te85-xZnx Nano-Structured Thin Films

In our present research work Ga15Te85-xZnx (x = 2, 4) nano-structured chalcogenide thin films of polycrystalline nature were prepared and characterized by structural, optical and electrical means. The outcome of optical absorption data suggests that the law of direct transitions exists in these nano-structured chalcogenide thin films. The observed value of optical band gap (E-g) is found to become lesser by adding Zn contents in Ga-Te system. It may be due to reduction in grain size and growth in density of defect states. The dc conductivity becomes higher as the temperature increases. The observed experimental value indicates that the conduction mechanism is due to thermally generated charge carriers. The activation energy is also found to reduce by adding Zn contents in Ga-Te system. It can be closely connected with the change in Fermi level.