4.7 Article

Synthesis of nanocrystalline GaN from Ga2O3 nanoparticles derived from salt-assisted spray pyrolysis

Journal

ADVANCED POWDER TECHNOLOGY
Volume 20, Issue 1, Pages 29-34

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.apt.2008.10.005

Keywords

Nanomaterials; Spray pyrolysis; Semiconductors; Luminescence

Funding

  1. Ministry of Education, Culture, Sports, Science and Technology of Japan
  2. Japan Society for the Promotion of Science (JSPS).

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Gallium nitride (GaN) nanoparticles were successfully produced from nano-sized gallium oxide (Ga2O3) particles under a flow of ammonia gas. The gallium oxide nanoparticles were prepared by salt-assisted spray pyrolysis ( SASP). Highly crystalline Ga2O3 nanoparticles with an average diameter of approximately 10 nm were obtained at various temperatures when a flux salt (LiCl, 5 mol/l) was added to the precursor solution. The effects of the crystallinity of the Ga2O3 particles and nitridation time on transformation to GaN were characterized using X-ray diffraction and scanning/transmission electron microscopy. Highly crystalline GaN nanoparticles with a mean size of 23.4 nm and a geometric standard deviation of 1.68 nm were obtained when Ga2O3 nanoparticles with relatively low crystallinity were used as the starting material. The resulting GaN nanoparticles showed a photoluminescence peak at 364 nm under UV excitation at 254 nm. (c) 2008, The Society of Powder Technology Japan. Published by Elsevier BV and The Society of Powder Technology Japan. All rights reserved.

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