4.8 Article

Next-Generation Narrow-Band Green-Emitting RbLi(Li3SiO4)2:Eu2+ Phosphor for Backlight Display Application

Journal

ADVANCED MATERIALS
Volume 30, Issue 38, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201802489

Keywords

display backlight; light-emitting diodes; narrow-band green emission; phosphors; photoluminescence

Funding

  1. National Natural Science Foundations of China [51722202, 91622125, 51572023, 11574003]
  2. Natural Science Foundations of Beijing [2172036]

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The discovery of high efficiency narrow-band green-emitting phosphors is a major challenge in backlighting light-emitting diodes (LEDs). Benefitting from highly condensed and rigid framework structure of UCr4C4-type compounds, a next-generation narrow green emitter, RbLi(Li3SiO4)(2):Eu2+ (RLSO:Eu2+), has emerged in the oxide-based family with superior luminescence properties. RLSO:Eu2+ phosphor can be efficiently excited by GaN-based blue LEDs, and shows green emission at 530 nm with a narrow full width at half maximum of 42 nm, and very low thermal quenching (103%@150 degrees C of the integrated emission intensity at 20 degrees C), however its chemical stability needs to be improved later. The white LED backlight using optimized RLSO:8%Eu2+ phosphor demonstrates a high luminous efficacy of 97.28 lm W-1 and a wide color gamut (107% National Television System Committee standard (NTSC) in Commission Internationale de L'Eclairage (CIE) 1931 color space), suggesting its great potential for industrial applications as liquid crystal display (LCD) backlighting.

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