Journal
ADVANCED MATERIALS
Volume 30, Issue 38, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201802883
Keywords
charge trapping; flash memory; perovskite; photonic synapse; quantum dots
Categories
Funding
- Natural Science Foundation of China [61601305, 61604097]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170302145229928, JCYJ20170302151653768, JCYJ20170818143618288, KQJSCX20170727100433270, KQJSCX20170327150812967]
- Guangdong Provincial Department of Science and Technology [2018B030306028, 2017A010103026]
- Department of Education of Guangdong Province [2015KQNCX141, 2016KTSCX120]
- NTUT-SZU Joint Research Program [2018007]
- Natural Science Foundation of SZU
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Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.
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