Journal
ADVANCED MATERIALS
Volume 30, Issue 51, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201801164
Keywords
2D materials; hybrids; photodetectors; quantum dots
Categories
Funding
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme [725165]
- Spanish Ministry of Economy and Competitiveness (MINECO)
- Fondo Europeo de Desarrollo Regional (FEDER) [TEC2017-88655-R]
- European Union H2020 Programme [696656 Graphene Flagship]
- Fundacio Privada Cellex
- CERCA Programme
- Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0522]
Ask authors/readers for more resources
Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available