4.8 Article

Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides

Journal

ADVANCED MATERIALS
Volume 30, Issue 47, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201802687

Keywords

2D materials; electroluminescence; layered transition metal dichalcogenides

Funding

  1. Singapore National Research Foundation
  2. Ministry of Education (MOE), Singapore [MOE2015-T2-2-123, MOE2017-T2-1-134, R-144-000-387-114]

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Ultrathin layers of van der Waals inorganic semiconductors represent a new class of excitonic materials with attractive light-emitting properties. Recent observation of valley polarization, optically pumped lasing, exciton-polaritons, and single-photon emission highlights the exciting prospects for two-dimensional (2D) semiconductors for applications in novel photonic devices. Development of efficient and reliable light sources based on excitonic electroluminescence in 2D semiconductors is of fundamental importance toward the practical implementation of photonic devices. Achieving electroluminescence in these atomically thin layers requires unconventional device designs and in-depth understanding of the carrier injection and transport mechanisms. Herein, various strategies for electrically generating excitons in 2D semiconducting transition metal dichalcogenides such as monolayer MoS2 are reviewed and challenges and opportunities are outlined. Furthermore, novel device concepts such as tunable chiral emission, electrically driven quantum emission, and high-frequency modulation are highlighted.

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