Journal
ADVANCED MATERIALS
Volume 26, Issue 20, Pages 3275-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201306028
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Funding
- Chinese National Key Fundamental Research Projects [2013CBA01600, 2013CB932903, 2011CB922100]
- National Natural Science Foundation of China [61325020, 61261160499, 11274154, 60990314, 11374142]
- National Science and Technology Major Project [2011ZX0270]
- Natural Science Foundation of Jiangsu Province [BK2012302, BK20130544, BK2011011, BK20130055]
- Specialized Research Fund for the Doctoral Program of Higher Education [20120091110028]
- China Postdoctoral Science Foundation [2012M521049]
- Jiangsu Planned Projects for Postdoctoral Research Funds [1301082C]
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Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to - 10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.
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