Journal
ADVANCED MATERIALS
Volume 26, Issue 28, Pages 4845-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201401250
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Funding
- Samsung Advanced Institute of Technology (SAIT)
- Fannie and John Hertz Foundation
- National Science Foundation
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A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.
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