4.8 Article

Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-XCdXS Core/Shell Heterostructured Quantum Dots

Journal

ADVANCED MATERIALS
Volume 26, Issue 47, Pages 8034-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201403620

Keywords

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Funding

  1. Korea Institute of Science and Technology [2E24821]
  2. National Research Foundation (NRF) - Korean government [NRF-2014R1A2A2A01006739]
  3. LG Chem Ltd.
  4. Ministry of Trade, Industry and Energy (MOTIE, Korea) [10045145]
  5. Chemical Sciences, Biosciences and Geosciences Division of Office of Science, Office of Basic Energy Sciences, US Department of Energy
  6. Korea Evaluation Institute of Industrial Technology (KEIT) [10045145] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. National Research Foundation of Korea [2014R1A2A2A01006739] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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CdSe/Zn1-XCdXS core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. Giant CdSe/Zn1-XCdXS QDs (e.g., CdSe core radius of 2 nm and Zn1-XCdXS shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2)) of deep-red emission, along with improved device stability.

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