Journal
ADVANCED MATERIALS
Volume 26, Issue 41, Pages 7078-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201402558
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Funding
- Beatriu de Pinos postdoctoral scholarship from the Catalan Agency for Management of University [2011 BP-A 00220]
- AGAUR-Generalitat de Catalunya
- DFG [SFB 762]
- National Research Council of Science & Technology (NST), Republic of Korea [K14015] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object.
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