Journal
ADVANCED MATERIALS
Volume 26, Issue 36, Pages 6250-6254Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201402063
Keywords
MoS2; transition metal dichalcogenides; noble metal nanoparticles; nanobelts; nanosheets; memory devices
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Funding
- MOE under AcRF Tier 2 in Singapore [ARC 26/13, MOE2013-T2-1-034]
- MOE under AcRF Tier 1 in Singapore [RG 61/12, RGT18/13, RG5/13]
- MOE under Start-Up Grant in Singapore [M4080865.070.706022]
- National Research Foundation, Prime Minister's Office, Singapore
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MoS2, TaS2, TiS2, WSe2 and TaSe2 nanobeltsdecorated with a PtAg alloy or Pt NPs have been successfully synthesized by etching 2D nanosheets under a mild reaction condition followed by a subsequent nanosheet-to-nanobelt transformation mediated by the PVP template. The PtAg-MoS2 hybrid nanobelt coated with PVP is used as the active material in a memory device, which exhibits hysteresis behavior with the function of dynamic random access memory.
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