Journal
ADVANCED MATERIALS
Volume 26, Issue 41, Pages 7110-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201402299
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Funding
- National Young 1000 Talent Plan
- Pujiang Talent Plan in Shanghai
- National Natural Science Foundation of China [61322407]
- Chinese National Science Fund for Talent Training in Basic Science [J1103204]
- Australian Research Council
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High-quality thin films of the topological insulator Bi2-xSbxSe3 are grown by molecular beam epitaxy. A metal-insulator transition along with strong surface states - revealed by Shubnikov-de Haas oscillations - is observed as the Sb concentration is increased. This system represents a widely tunable platform for achieving high surface conduction, suppressing the bulk influence, and manipulating the band structure of topological insulators.
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