4.8 Article

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Chemical insight into electroforming of resistive switching manganite heterostructures

Francesco Borgatti et al.

NANOSCALE (2013)

Article Engineering, Electrical & Electronic

Scaling Potential of Local Redox Processes in Memristive SrTiO3 Thin-Film Devices

Regina Dittmann et al.

PROCEEDINGS OF THE IEEE (2012)

Article Chemistry, Multidisciplinary

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

Feng Miao et al.

ADVANCED MATERIALS (2011)

Article Chemistry, Multidisciplinary

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

Ruth Muenstermann et al.

ADVANCED MATERIALS (2010)

Article Materials Science, Multidisciplinary

Mechanism for bipolar resistive switching in transition-metal oxides

M. J. Rozenberg et al.

PHYSICAL REVIEW B (2010)

Review Chemistry, Multidisciplinary

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser et al.

ADVANCED MATERIALS (2009)

Article Physics, Applied

Switching dynamics in titanium dioxide memristive devices

Matthew D. Pickett et al.

JOURNAL OF APPLIED PHYSICS (2009)

Article Nanoscience & Nanotechnology

Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS

John Paul Strachan et al.

NANOTECHNOLOGY (2009)

Article Materials Science, Multidisciplinary

Relationship between resistive switching characteristics and band diagrams of Ti/Pr1-xCaxMnO3 junctions

S. Asanuma et al.

PHYSICAL REVIEW B (2009)

Article Physics, Condensed Matter

Transport and ordering of polarons in CER manganites PrCaMnO

S. Schramm et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2008)

Review Materials Science, Multidisciplinary

Resistive switching in transition metal oxides

Akihito Sawa

MATERIALS TODAY (2008)

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

Article Physics, Multidisciplinary

Mechanism of electric-pulse-induced resistance switching in manganites

M. Quintero et al.

PHYSICAL REVIEW LETTERS (2007)

Article Physics, Applied

Highly rectifying Pr0.7Ca0.3MnO3/SrTi0.9998Nb0.0002O3 p-n junction -: art. no. 112508

A Sawa et al.

APPLIED PHYSICS LETTERS (2005)

Review Physics, Multidisciplinary

Mixed-valence manganites: fundamentals and main properties

LP Gor'kov et al.

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS (2004)

Article Physics, Applied

Work function of the mixed-valent manganese perovskites

DW Reagor et al.

JOURNAL OF APPLIED PHYSICS (2004)

Article Physics, Applied

Reproducible switching effect in thin oxide films for memory applications

A Beck et al.

APPLIED PHYSICS LETTERS (2000)