4.8 Article

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

Journal

ADVANCED MATERIALS
Volume 26, Issue 17, Pages 2730-2735

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201304054

Keywords

RRAM; PCMO; resistive switching; HAXPES; redox-reaction

Funding

  1. European Union Council [246102 IFOX]
  2. Deutsche Forschungsgemeinschaft [SFB 917]
  3. Federal Ministry of Education and Research (BMBF) [05KS7UM1, 05K10UMA, 05KS7WW3, 05K10WW1]

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