☆ 4.8 Article

Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

ADVANCED MATERIALS (2014)

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Journal

ADVANCED MATERIALS
Volume 26, Issue 42, Pages 7170-7177

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201401354

Keywords

data storage; amorphous oxides; semiconductors; thin films; self-assembly; dielectrics

Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. ONR [MURI N00014-11-1-0690]
  2. Northwestern University Materials Research Science and Engineering Center under NSF grant [1121262]
  3. Polyera Corp.

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