Journal
ADVANCED MATERIALS
Volume 26, Issue 22, Pages 3649-3654Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201400127
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Funding
- National 973 projects from the Ministry of Science and Technology [2012CB933003, 2013CB932601]
- NSF of China [51172273]
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Getting a grip on the switching mechanism in nanoionic resistive memories: the bipolar electrochemical mechanism for mass transfer of Ag in nanoscale SiO2 is disclosed. The in-situ atomic-level experiments provide detailed evidence of the mass-transfer process under external electric fields. The mass transfer of Ag directly leads to conductive filament formation and disruption, which is responsible for the switching mechanism in nanoionic resistive memories.
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