Journal
ADVANCED MATERIALS
Volume 25, Issue 43, Pages 6158-6182Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201302514
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Funding
- National Natural Science Foundation of China [20721061, 51033006, 51222306, 51003107, 61201105, 91027043, 91222203, 91233205]
- China-Denmark Co-project [60911130231]
- NSFC-DFG Transregio Project [TRR61]
- Ministry of Science and Technology of China [2011CB808400, 2011CB932300, 2013CB933403, 2013CB933500]
- Beijing NOVA Programme [Z131101000413038]
- Chinese Academy of Sciences
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Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.
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