Journal
ADVANCED MATERIALS
Volume 25, Issue 23, Pages 3187-3191Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201300973
Keywords
metal assisted chemical etching; metallurgical silicon; silicon nanowire; metal impurities; photoelectrochemical cell
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Funding
- International Max-Planck Research School (IMPRS)
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0028604]
- BMBF-Research College StrukturSolar
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Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large areas of silicon nanowires (SiNW) are fabricated. The purification effect induces a similar to 35% increase in photocurrent for a SiNW based photoelectrochemical cell.
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