Journal
ADVANCED MATERIALS
Volume 25, Issue 17, Pages 2457-2461Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201204543
Keywords
conducting fullerene; in-situ n-doping; fulleropyrrolidinium iodide; conductivity
Categories
Funding
- National Science Foundation [DMR-0120967]
- Department of Energy [DE-FC3608GO18024/A000]
- Air Force Office of Scientific Research [FA9550-09-1-0426]
- Asian Office of Aerospace RD [FA2386-11-1-4072]
- Office of Naval Research [N00014-11-1-0300]
- Boeing Foundation
- US NSF CHE-CAREER [0844999]
- NSC of Taiwan [NSC100-2917-I-564-031]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [844999] Funding Source: National Science Foundation
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n-Doping of solution-processible organic semiconductors: highly conductive fullerenes are demonstrated through solution-processed fulleropyrrolidinium iodide (FPI) and FPI-doped PCBM to reach a high conductivity (3.2 S/m). The n-doping proceeds via anion-induced electron transfer between the iodide on FPI and the fullerene in the solid state.
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