High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films

ADVANCED MATERIALS

Volume 25, Issue 33, Pages 4663-4667

WILEY-V C H VERLAG GMBH

complementary inverters; organic electronics; electron traps; grain boundaries; blend aligned crystals

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. National Defense Science and Engineering
2. National Science Foundation [NSF-DMR-1209468]
3. NSF [0922648]
4. Air Force Office of Scientific Research [FA9550-12-1-0190]
5. German Research Foundation (DFG, Materials World Network) [LE 747/44-1]
6. European Commission (ERC Grant NuDev) [267995]
7. Direct For Mathematical & Physical Scien
8. Division Of Materials Research [1209468] Funding Source: National Science Foundation
9. Div Of Electrical, Commun & Cyber Sys
10. Directorate For Engineering [0922648] Funding Source: National Science Foundation