Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors

ADVANCED MATERIALS

Volume 25, Issue 32, Pages 4445-4451

WILEY-V C H VERLAG GMBH

contact printing; metal decoration; III-V nanowire field-effect transistors; n-channel metal-oxide-semiconductor (NMOS); inverters; threshold voltage modulation

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. General Research Fund of the Research Grants Council of Hong Kong SAR, China [CityU 101210, CityU 101111]
2. National Natural Science Foundation of China [51202205]
3. Guangdong National Science Foundation [S2012010010725]
4. Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20120618140624228]
5. Shenzhen Research Institute, City University of Hong Kong