Journal
ADVANCED MATERIALS
Volume 25, Issue 32, Pages 4445-4451Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201301362
Keywords
contact printing; metal decoration; III-V nanowire field-effect transistors; n-channel metal-oxide-semiconductor (NMOS); inverters; threshold voltage modulation
Categories
Funding
- General Research Fund of the Research Grants Council of Hong Kong SAR, China [CityU 101210, CityU 101111]
- National Natural Science Foundation of China [51202205]
- Guangdong National Science Foundation [S2012010010725]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20120618140624228]
- Shenzhen Research Institute, City University of Hong Kong