Journal
ADVANCED MATERIALS
Volume 25, Issue 39, Pages 5643-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201301601
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Funding
- Institute for Basic Science (IBS) in Korea
- National Research Foundation of Korea (NRF) [2011-0005145, 2009-0077249, 2012R1A1A2008830]
- Korea government (MEST)
- National Research Foundation of Korea [2012R1A1A2008830, 2009-0077249] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.
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