☆ 4.8 Article

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

ADVANCED MATERIALS (2013)

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Journal

ADVANCED MATERIALS
Volume 25, Issue 10, Pages 1474-1478

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201204097

Keywords

resistive switching; metalinsulator transitions; semiconductor memory; nonvolatile storage; nanoionics

Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. Intel [55887]
  2. Fondazione Cariplo [2010-0500]

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