4.8 Article

Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs

Journal

ADVANCED MATERIALS
Volume 25, Issue 47, Pages 6847-6853

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201302312

Keywords

van der Waals epitaxy; double heterostructures; graphene; metal-organic vapor-phase epitaxy; indium arsenide

Funding

  1. Priority Research Centers Program through the National Research Foundation of Korea (NRF) [2010-0020207]
  2. Ministry of Education, Science and Technology
  3. Japan Society for the Promotion of Science (JSPS) through the JSPS postdoctoral fellowship for foreign researchers [P11363]
  4. NRF [2010-0020414, WCU: R32-2008-000-10180-0]
  5. KISTI [KSC-2011-G3-02]
  6. Austrian Science Fund (FWF) [P11363] Funding Source: Austrian Science Fund (FWF)
  7. National Research Foundation of Korea [2010-0020207] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. Grants-in-Aid for Scientific Research [23221007] Funding Source: KAKEN

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