Journal
ADVANCED MATERIALS
Volume 25, Issue 14, Pages 1987-1992Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201204572
Keywords
resistive switching memory; nanodots; uniformity; thin films
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Funding
- Converging Research Center Program through the National Research Foundation (NRF) of Korea [2012K001299]
- Global Research Laboratory program through the National Research Foundation (NRF) of Korea [2012040157]
- National Research Foundation of Korea [2012K1A1A2040157, R31-2012-000-10075-0, 2010-50170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.
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