Journal
ADVANCED MATERIALS
Volume 25, Issue 23, Pages 3222-3226Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201301113
Keywords
resistive switching; strongly correlated systems; Mott insulators; V2O3; NiS2; AM4 Q8
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Funding
- French Agence Nationale de la Recherche [ANR-09-Blan-0154-01, ANR-2011-EMMA-016-01]
- Agence Nationale de la Recherche (ANR) [ANR-09-BLAN-0154] Funding Source: Agence Nationale de la Recherche (ANR)
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A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.
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