Journal
ADVANCED MATERIALS
Volume 24, Issue 43, Pages 5832-5836Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201909
Keywords
MoS2; phototransistors; transition metal dichalcogenide
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2012R1A1A1042630]
- Kookmin University in South Korea
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1232191] Funding Source: National Science Foundation
- National Research Foundation of Korea [과C6A1602, 2012R1A1A1042630] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
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