Journal
ADVANCED MATERIALS
Volume 25, Issue 1, Pages 137-141Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203012
Keywords
HgTe; As2S3; colloidal quantum dot; inorganic matrix; field effect transistors; mid-IR; photodetection
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Funding
- DARPA COMPASS program through a grant from ARO
- NSF MRSEC Program [DMR-0820054]
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HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
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