Journal
ADVANCED MATERIALS
Volume 24, Issue 46, Pages 6181-6185Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202825
Keywords
n-type materials; doping; PbS; colloidal quantum dots; photovoltaics
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Funding
- King Abdullah University of Science and Technology (KAUST) [KUS-11-009-21]
- Ontario Research Fund Research Excellence Program
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- NSERC CGS D Scholarship
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N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm(2) V-1 s(-1). The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 10(18) cm(-3) is varied systematically.
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