4.8 Article

GaS and GaSe Ultrathin Layer Transistors

Journal

ADVANCED MATERIALS
Volume 24, Issue 26, Pages 3549-3554

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201361

Keywords

GaS; GaSe; layered materials; transistors; semiconductors; photodetectors

Funding

  1. Indo-US Science & Technology Forum (IUSSTF)
  2. NSF-MRSEC at NU
  3. NSF-NSEC at NU
  4. MRSEC program of the National Science Foundation at the Materials Research Center of Northwestern University [DMR-1121262]

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