4.8 Article

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

Journal

ADVANCED MATERIALS
Volume 24, Issue 38, Pages 5254-5260

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201724

Keywords

field-effect transistors; reduced graphene oxide; thermal responsiveness; sensors

Funding

  1. National Research Foundation of Korea (NRF) [2008-000-20533-0, 2010-0015035]
  2. WCU through the National Research Foundation of Korea (NRF) [R32-2008-000-10124-0]
  3. Ministry of Education, Science and Technology (MEST), Republic of Korea
  4. National Research Foundation of Korea [2012R1A1A3008822, R32-2012-000-10124-0, 2009-0093249] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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