☆ 4.8 Article

Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors

ADVANCED MATERIALS (2012)

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Journal

ADVANCED MATERIALS
Volume 24, Issue 9, Pages 1171-1175

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201103513

Keywords

organic semiconductors; light emitting field effect transistor; split-gate; and injection

Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. National Science Foundation [DMR 0856060, DMR 1005546]
  2. NNIN network
  3. Natural Science Foundation of China [51010003, 50990065, 51073058]
  4. Direct For Mathematical & Physical Scien [0843934, 0856060] Funding Source: National Science Foundation
  5. Division Of Materials Research [0843934, 0856060] Funding Source: National Science Foundation
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [1005546] Funding Source: National Science Foundation

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