Journal
ADVANCED MATERIALS
Volume 25, Issue 4, Pages 630-634Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202840
Keywords
graphene; tansfer-free growth; Ni evaporation; rapid thermal annealing; Ni3C
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Funding
- National Science Foundation [CMMI 0758199, CMMI 0900419]
- Office of Naval Research [N00014-09-7581-0943]
- National Natural Science Foundation of China [90923039]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0900419] Funding Source: National Science Foundation
- EPSCoR [1004094] Funding Source: National Science Foundation
- Office Of The Director [1004094] Funding Source: National Science Foundation
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The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.
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