Design of a Voltage-Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer

ADVANCED MATERIALS

Volume 24, Issue 21, Pages 2869-2873

WILEY-V C H VERLAG GMBH

multiferroic heterostructures; magnetic memory; magnetoelectric materials; phase-field methods; domain switching dynamics

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. National Basic Research Program of China [2009CB623303]
2. NSF of China [50832003, 50921061]
3. NSF [DMR-1006541, DMR-0820404, OCI-0821527]
4. Materials Simulation Center
5. Graduated Education and Research Services at the Pennsylvania State University
6. Direct For Mathematical & Physical Scien
7. Division Of Materials Research [1006541] Funding Source: National Science Foundation