Journal
ADVANCED MATERIALS
Volume 24, Issue 44, Pages 5910-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201831
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Funding
- Converging Research Center Program through the Ministry of Education, Science, and Technology [2011K000631]
- Brain Korea 21 Project
- Korea Science and Engineering Foundation (KOSEF)
- Ministry of Science and Technology (MEST), Republic of Korea [R11-2007-050-03001-0]
- National Research Foundation of Korea [2007-0056565, 2010-50193] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.
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