Journal
ADVANCED MATERIALS
Volume 24, Issue 48, Pages 6490-6495Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203101
Keywords
ferroelectrics; defect engineering; piezoresponse force microscopy; nonvolatile memory
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Funding
- Institute of Basic Science (IBS)
- National Research Foundation of Korea (NRF) [2012-0005847, 2011-0005145]
- Korea government (MEST)
- Army Research Office [W911NF-10-1-0362]
- National Science Foundation [ECCS-0708759]
- David & Lucile Packard Fellowship
- POSCO TJ Park Doctoral Foundation
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Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.
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