Journal
ADVANCED MATERIALS
Volume 25, Issue 6, Pages 883-888Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201203263
Keywords
GaN; nanowires; force sensors; piezotronic materials
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Funding
- US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-07ER46394]
- NSF [CMMI 0403671]
- Chinese Academy of Sciences [KJCX2-YW-M13]
- Region Rhone-Alpes
- European Community [257375]
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Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 +/- 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.
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