☆ 4.8 Article

Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

ADVANCED MATERIALS (2012)

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Journal

ADVANCED MATERIALS
Volume 24, Issue 26, Pages 3573-3576

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201200671

Keywords

Ag2Se nanoparticles; solution process; flexible electronics; resistance switching; non-volatile memory

Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. World Class University program at Sunchon National University
  2. National Research Foundation of Korea [R31-2012-000-10022-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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