Journal
ADVANCED MATERIALS
Volume 25, Issue 4, Pages 534-538Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202031
Keywords
memristors; spintronics; logic gates; memory; non-volatile materials
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Funding
- EU project HINTS [NMP3-SL-2011-263104]
- EPSRC [EP/G054568/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G054568/1] Funding Source: researchfish
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Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.
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