4.8 Article

High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

Journal

ADVANCED MATERIALS
Volume 24, Issue 46, Pages 6164-6168

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201202195

Keywords

polymeric materials; charge transport; thin films; conjugated polymers

Funding

  1. Center for Energy Efficient Materials, an Energy Frontier Research Center
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001009]
  3. NSF
  4. National Science Foundation Polymer program [NSF-DMR-0856060]
  5. Korean Ministry of Science via a Global Research Laboratory (GRL)
  6. Department of Energy [DE-FG02-08ER46535]

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High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of edge-on orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V-1 s(-1).

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