4.8 Article

Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits

Journal

ADVANCED MATERIALS
Volume 24, Issue 40, Pages 5433-5439

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201464

Keywords

ambipolarity; organic field-effect transistors; P(VDF-TrFE); dielectric; conjugated polymers; charge transport; organic complementary circuit

Funding

  1. Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education Science and Technology, Korea [2011-0031639]
  2. Samsung Mobile Display for Development of OTFT backplane for AMOLED by a printing process
  3. National Research Foundation of Korea (NRF)
  4. Ministry of Education, Science and Technology (MEST) [2010-0023180]
  5. development of next generation RFID technology for item level applications [2008-F052-01]
  6. MKE
  7. NRF
  8. Korean government (MEST) [2010-0029212]
  9. Program for Integrated Molecular Systems at GIST, World Class University program through the Korea Science and Engineering Foundation
  10. MEST [R31-10026]

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