4.8 Article

High-Performance n-type Organic Semiconductors: Incorporating Specific Electron-Withdrawing Motifs to Achieve Tight Molecular Stacking and Optimized Energy Levels

Journal

ADVANCED MATERIALS
Volume 24, Issue 7, Pages 911-+

Publisher

WILEY-BLACKWELL
DOI: 10.1002/adma.201103978

Keywords

n-type organic semiconductor; molecular stacking; orgnic field-effect transistors

Funding

  1. Basic Science Research Program (CRI) [RIAMI-AM0209(0417-20090011)]
  2. WCU (World Class University) through National Research Foundation of Korea [R31-2008-000-10075-0]
  3. Ministry of Education, Science and Technology
  4. National Research Foundation of Korea [2009-0081571, R31-2012-000-10075-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Novel pi-conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic fi eldeffect transistor (OFET) properties with electron mobilities as high as 2.14 cm(2) V(-1)s(-1) and on-off current ratios > 10(6).

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