4.8 Article

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

Journal

ADVANCED MATERIALS
Volume 24, Issue 14, Pages 1844-1849

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201104104

Keywords

nonvolatile memory; resistive switching; in situ TEM; conductive filament; solid-electrolyte insulator

Funding

  1. Ministry of Science and Technology of China [2011CBA00602, 2010CB934200, 2011CB921804, 2009CB930803, 2011CB707600, 2009CB623702, 2008AA031403, 2011AA010401, 2011AA010402, 2009AA03Z306]
  2. NSFC [60825403, 61106119, 61106082, 50972160, 51071044, 60976003, 61006011]

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