Journal
ADVANCED MATERIALS
Volume 24, Issue 14, Pages 1844-1849Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201104104
Keywords
nonvolatile memory; resistive switching; in situ TEM; conductive filament; solid-electrolyte insulator
Categories
Funding
- Ministry of Science and Technology of China [2011CBA00602, 2010CB934200, 2011CB921804, 2009CB930803, 2011CB707600, 2009CB623702, 2008AA031403, 2011AA010401, 2011AA010402, 2009AA03Z306]
- NSFC [60825403, 61106119, 61106082, 50972160, 51071044, 60976003, 61006011]