Journal
ADVANCED MATERIALS
Volume 24, Issue 31, Pages 4255-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201201248
Keywords
DNA Interlayer; Charge Injection Barriers; Contact Resistance; Interfacial Dipole; Organic Field-Effect Transistors
Categories
Funding
- Department of Energy Office of Basic Energy Sciences [DE-SC0002368]
- Camille Dreyfus Teacher Scholar Award
- Alfred Sloan Research Fellowship program
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By inserting DNA interlayers beneath the Au contact, the contact resistance of PC70BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.
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