Journal
ADVANCED MATERIALS
Volume 23, Issue 21, Pages 2464-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201100476
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Funding
- Research Grants Council of Hong Kong [CUHK2/CRF/08, CUHK4179/10E, CUHK4182/09E]
- National Science Foundation of China [60990314, 60928009]
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A SiO2/Si substrate modified by an octadecyltrimethoxysilane (OTMS) self-assembled monolayer is used to obtain high-quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm(2) V-1 s(-1). The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.
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