4.8 Article

Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching

Journal

ADVANCED MATERIALS
Volume 23, Issue 27, Pages 3061-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201100633

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Funding

  1. Institute of Physics (IOP)
  2. Chinese Academy of Sciences (CAS)
  3. Science Foundation of CAS
  4. National Science Foundation of China (NSFC)

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A top-down approach for controlled tailoring of graphene nanostructures with zigzag edges is presented. It consists of two key steps: artificial defect patterning and hydrogen-plasma etching. With this approach, various graphene nanostructures with sub-10 nm features and identical zigzag edges are reliably achieved. This approach shows great promise for making future graphene devices or circuits.

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