Journal
ADVANCED MATERIALS
Volume 23, Issue 47, Pages 5633-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201103379
Keywords
memory; resistive random access memory (RRAM); switches; oxides
Categories
Funding
- U.S. Government's Nano-Enabled Technology Initiative
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
Ask authors/readers for more resources
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
