Journal
ADVANCED MATERIALS
Volume 23, Issue 10, Pages 1277-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201004317
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Funding
- National Natural Science Foundation of China [10874226]
- National Basic Research Program of China, Shanghai Key Program [1052nm07600]
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai.
- Converging Research Center [2009-0081961]
- Ministry of Education, Science and Technology [R31-2008-000-10075-0]
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A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/ off ratio to permit ordinary sense amplifiers to measure 1 or 0, and is fully compatible with complementary metal- oxide semiconductor processing.
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