Journal
ADVANCED MATERIALS
Volume 23, Issue 45, Pages 5364-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201102534
Keywords
quantum dots; quantum wires; quantum wells; light-emitting diodes; GaN; pyramid structures
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Funding
- Ministry of Education, Science and Technology [R31-2008-000-1071-0]
- Ministry of Knowledge Economy
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Electrically driven quantum dot, wire, and well hybrid light-emitting diodes are demonstrated by using nanometer-sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light-emitting diodes containing low-dimensional quantum structures are good candidates for broad-band highly efficient visible lighting sources.
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