Journal
ADVANCED MATERIALS
Volume 24, Issue 3, Pages 402-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201103679
Keywords
ferroelectric random access memory; ferroelectrics; multilevel systems; non-volatile memory
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Funding
- National Research Foundation of Korea
- Korean Ministry of Education, Science, and Technology [2010-0020416]
- U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division
- Army Research Office [W911NF-10-1-0362]
- National Science Foundation [ECCS-0708759]
- David & Lucile Packard Fellowship
- POSCO TJ Park Doctoral Foundation
- National Research Foundation of Korea [2010-0020416] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.
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